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| AP1000A SILICON PIN DIODE DESCRIPTION: The AP1000A is a Diffused Epitaxial Silicon PIN Diode. PACKAGE STYLE 15 MAXIMUM RATINGS IC VCE PDISS TJ TSTG JC TSOLD O O 100mA 100 V 500 mW @ TC = 25 C -65 C to +150 C -65 C to +175 C 50 C/W 5.0 Sec./200 C O O O O O NONE CHARACTERISTICS SYMBOL VB CJ RS TL TS CP LS IR = 10 A VR = 6.0 V IF = 20 mA TC = 25 C O TEST CONDITIONS f = 1.0 MHz f = 1.0 GHz MINIMUM 100 TYPICAL MAXIMUM 0.05 2.6 2.0 UNITS V pF Ohms nS IF = 100 mA IF = 10 mA IR = 6.0 mA f = 1.0 MHz 100 10%-90% / 90%-10% 0.15 2.5 10 nS pF nH A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1202 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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